Engineering publications brought to you by Mark Allen

Memory

Everspin pushes ST-MRAM to 256Mbit

Toshiba moves to 64 layer flash memories

FTJ based memories could be smaller, more power efficient

Self flipping magnets could improve MRAM architecture

Plastic magnetic memory device for wearables

Dutch scientists develop chlorine atom based memory technique

Dutch scientists develop brain-inspired memory material

Simplified embedded system design with HyperRAM

IBM celebrates 20 years of MRAM with 11nm announcement

The switch that could double USB memory

Rugged Flash Drive five times faster with USB 3.0

News Analysis: All change with phase change?