Engineering publications brought to you by Mark Allen

Memory

First 16-die stacked NAND Flash Memory with TSV Technology

Toshiba unveils 48 layer 256Gbit flash memory

Nanomagnets could enable high density on chip storage

Breakthrough memory technology 1000 times faster than flash

2Mbit RRAM cell overcomes filament instability, temperature issues

Small and reliable solid state drive

Phase change RAM developed on plastic substrate for wearable applications

Cypress appears to have won acquisition battle

Cypress wins ISSI battle, sells touchscreen business

Micron launches 16Gbyte TLC NAND on 16nm process

Memory developer gets funding boost

Reconfigurable chip defends against memory access attacks