Engineering publications brought to you by Mark Allen

Research Design

Etch system brings 'atomic level precision'

GloFo takes FD-SOI to the 22nm node

Black arsenic phosphorus used to build FET

IBM led team debuts 7nm test chips

Joint lab to research radiation effects and device reliability

Black phosphorus transistors 'one step closer' say Canadian researchers

Spinning a yarn when it comes to powering wearable electronics

Plasmon wakes can be controlled, claims Harvard team

Researchers use leaves as inspiration for graphene micro supercapacitor

GloFo completes its acquisition of IBM microelectronics

MEMS device may replace pills and injections

Crosstalk eliminated in nanoscale optical waveguides, says US team