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As the voltage sinks to less than 0.3V in a modern process, the effect of the leakage, which is not suppressed by the lower supply voltage, shoots up dramatically (see fig 2). Worse, any attempt to lower the threshold voltage to improve speed tends to increase leakage, negating the benefit. So, beyond a certain minimum voltage, active power gains from the lower supply voltage are quickly lost. For this reason, attention has shifted amongst processor designers from the subthreshold region to the near-threshold area that lies just above the threshold voltage – roughly between 0.3V and 0.8V.
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Here, designers believe they can make big gains in power efficiency. At February's International Solid State Circuits Conference, Intel outlined a graphics processor that operates close to the threshold region, delivering an efficiency, measured in GFLOP/W, 2.7 times higher than that achieved at a 'normal' voltage of about 0.4V higher. There is one last catch: variability. Variability between transistors is already a major problem in nanometre processes. As you cut the supply voltage, these effects from the perspective of the circuit designer become magnified. Work by Professor David Blaauw and colleagues at the University of Michigan, who have been working with ARM on near-threshold logic development, showed that random dopant fluctuations cause the biggest problems. These small changes tend to change the effective channel length, which in turn alters the effective threshold voltage (see fig 3). You can reduce this effect by making the transistor wider, but as designers expect to use parallelism to make up for speed, this is not good news for density and cost.
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To be on the safe side, designers increase the supply voltage to ensure that all gates will switch within a given clock cycle, even in voltage droop, the result of many transistors switching in close proximity. This rise in operating voltage increases the power consumption. For its graphics unit, Intel used a calibration scheme during test to better characterise the threshold voltages for transistors and work out a safe minimum voltage and achieve an average supply voltage reduction of around 200mV. In its work with Michigan, ARM has investigated other approaches. The Razor technique uses error detection to work out if a sudden voltage droop has caused logic to switch too slowly and, after pushing the voltage up, allows the operation to start again. Leakage remains an issue when circuitry is not switching. As with regular logic, power gating is an option, but might be used in very different ways to normal logic. ARM is also working on near-threshold logic circuits that can shut off not only between operations but also midway through each one to reduce the impact of leakage when operating at very slow clock speeds. This demands the use of logic gates that can retain their state without power and reactivate quickly. One option is to design the gates so they leak contents very slowly and are refreshed periodically like a DRAM before the charge dissipates entirely. Low voltage may not always be the answer, however. Some Michigan-based research has indicated that SRAMs can be more energy efficient at higher speeds. This makes it feasible to have clusters of slow processors using a higher speed shared cache without blocking each other. CISC architectures may also have an advantage over RISC approaches. More efficient encoding may not just reduce the average bit-length of instructions, cutting the energy needed to transfer, but the use of more complex addressing modes can also reduce the number of instructions needed for a given operation. It's still early days for near-threshold logic in mainstream applications, but lower-voltage circuits look to be inevitable as the focus continues to be on energy consumption in computing.