The devices are fabricated with Toshiba’s latest low-voltage U-MOS IX-H trench process, which it says optimises the element structure. According to Toshiba, the TPH3R70APL and TPN1200APL also deliver the industry’s lowest-in-class on-resistance of 3.7mΩ and 11.5mΩ respectively.
The devices are said to exhibit low output charge (QOSS: 74 / 24nC) and low gate switch charge (QSW: 21 / 7.5nC) and allow for a 4.5V logic level drive.
Compared with current devices that the U-MOS VIII-H process, Toshiba claims these devices have lower key figures of merit for MOSFETs for switching applications including RDS(ON) Qoss, and RDS(ON) QSW.
The TPH3R70APL is housed in a 5mm x 6mm SOP advance package and are said to be capable of handling drain currents (ID) up to 90A, while the TPN1200APL is in a 3mm x 3mm TSON advance package and handles ID levels up to 40A.
