Bipolar power transistor boosts current capability by 50%
1 min read
STMicroelectronics has introduced the first in a new series of high performance bipolar power transistors, which it claims boosts bipolar power transistor capability by 50%.
According to ST, the transistors offer an 'exceptional combination' of high current capability, collector emitter blocking voltage and ultra low collector emitter saturation voltage. They are designed for use in led drives, motor and relay drives, as well as dc to dc converters.
The 3STR1630 NPN transistor is the first in the new range and is manufactured using a low voltage planar technology. This technology incorporates a double metal process to allow the cell density to be almost doubled without requiring the use of sophisticated photolithography equipment. It is also optimised to enable transistors with Vceo ratings up to 100V, higher working switching frequencies (up to 300kHz), and a 40% reduction in Vce(sat).
Now in production, the 3STR1630 is housed in a small outline SOT-23 package and has a minimum BVCEO of 30V. According to the company, it has an equivalent on resistance of 100milliOhms at hFE figure of 50 and can handle a continuous current as high as 6A.
