CGD signs agreement with ITRI to develop GaN-based power supplies

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Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that is developing energy-efficient GaN-based power devices, has signed a Memorandum of Understanding with the Industrial Technology Research Institute (ITRI) of Taiwan.

Credit: CGD

The agreement is focused on developing high performance GaN solutions for USB-PD adaptors and the MoU also covers the sharing of domestic and international market information, joint visits to potential customers and promotional activities.

“We are excited to partner with ITRI, an organisation with a power solution research team that is very experienced in developing power solutions and holds many patents,” said Andrea Bricconi, Chief Commercial Officer, CGD. “We will be demonstrating some of their board designs at the PCIM show in Nuremberg in June. These products utilise CGD's IC chip architecture and ITRI's patented designs to achieve product size reduction, high efficiency and power density, and cost competitiveness.”

 Wen-Tien Tsai, the leader of  ITRI’s commercial power design team added, “CGD’s IC-enhanced GaN – ICeGaN – is a novel platform that improves ease-of-use, facilitates smart temperature control and enhances gate reliability. We are excited to include these benefits in our new power designs.”

According to analysts, Yole Group, the GaN market is expected to see strong demand, with key growth in the applications of comms power supplies, and automotive DC/DC converters and on-board chargers.

However, the first commercialised product in the market to adopt GaN devices has been USB-PD adaptors, and it is this market that the first designs from the partnership will address.

Specifically, the agreement covers the development of power solutions in the 140-240 W range with power densities exceeding 30 W/in3 for e-mobility, power tools, notebook and cell phone applications.