Transphorm’s high performance, high-reliability SuperGaN power semiconductors leverage one of the largest power GaN IP portfolios (1,000+ patents) within the widest variety of device packages currently available. This technological expertise has been harnessed in a normally-off d-mode GaN platform that delivers best-in-class robustness and reliability.
End products using SuperGaN FETs gain several advantages such as higher power density and efficiency along with lower total power system cost versus alternative solutions.
The above and other application advantages have been made possible by the SuperGaN platform’s fundamental physics that’s been able to drive innovations creating a more versatile, future-proofed GaN solution.
Commenting Farnell Product Category Director - Passives & Semiconductors, Jose Lok, said, “Onboarding Transphorm as a new supplier supports our commitment to deliver high quality products to customers while giving them the ability to choose preferred manufacturers as well as the best GaN device package and performance to meet their design needs.”
Benefits of Transphorm's SuperGaN Devices include:
- Industry-leading efficiency (over 99%)
- Up to 50% higher power density
- Up to 20% lower system cost
- Proven robustness and reliability
- Drop-in and/or drive compatible with all other high voltage power technologies
- Supports a wide range of power applications (from 40W to 7.5kW, with higher power ratings coming soon)
Transphorm’s GaN has been responsible for several industry firsts, such as the 1200 V GaN-on-Sapphire device slated for commercial availability mid-2024; short-circuit withstand times of five microseconds; and a GaN four quadrant switch with true voltage and current bidirectionality control.
Lok added, “The primary advantage of SuperGaN is the use of GaN in its native d-mode form. By doing this, the 2DEG channel that is spontaneously created between the undoped GaN and AlGaN layers is left untouched. This yields a simple-to-manufacture solution that harnesses all the 2DEG’s inherent advantages, maximising the device’s electron mobility and charge while minimizing temperature effects. The result is the highest performing solution spanning the widest power spectrum versus other Si and WBG technologies. These are just some of the many reasons we are now delighted to offer them, with rapid ordering and delivery options, to our customers.”
“The power electronics market across all industries is radically changing as power conversion technologies like our SuperGaN platform drive major design and performance advantages,” explained Vipin Bothra, VP of sales for North America and Europe at Transphorm. “Our GaN devices are currently being adopted into a global consumer, industrial and automotive markets.”
