Hynix, Toshiba to develop next gen mram
South Korea's Hynix Semiconductor and Japanese electronics giant Toshiba have announced a collaboration to develop and manufacture next generation spin transfer torque magnetoresistance random access memory (mram).
"MRAM is a rare gem full of exciting properties, like ultra high speed, low power consumption and high capacity, and it will play the role of key factor in driving advances in memories," said Oh Chul Kwon, pictured, Hynix's ceo. "It will also be a perfect fit for growing consumer demand in more sophisticated smartphones."
The collaborators believe the devices, which are capable of storing information without the use of electricity and processing data at ultra high speed, will be able to sustain future growth in the semiconductor industry.
"We believe mram has huge potential as highly scalable non volatile ram," said Kiyoshi Kobayashi, senior vp of Toshiba. "This joint development programme with Hynix is one of the key steps to support our efforts."
