With energy efficiency being crucial in high-power devices for reducing power consumption and ensuring stability, these 8th-generation 150V MXT MV MOSFETs (MDES15N056PTRH, MDU150N113PTVRH) were developed by leveraging the company’s advanced trench MOSFET technology.
In particular, the RDS(on) (the resistance value between the drain and the source of MOSFETs during on-state operation) of the MDES15N056PTRH was reduced by 22% compared to the previous generation, significantly enhancing energy efficiency in applications.
By improving the core cell and termination design, the Figure of Merit (FOM: RDS(on) x Qg) of MDES15N056PTRH and MDU150N113PTVRH has been improved by 23% and 39%, respectively, compared to the previous version. Furthermore, the adoption of surface-mount type packages, such as D2PAK-7L (TO-263-7L) and PDFN56, reduces MOSFET sizes, enabling flexible design of various applications, such as motor controllers, battery management systems (BMSs), residential solar inverters and industrial power supplies.
“Following the introduction of five 8th-generation 200V and 150V MOSFETs last year, we are pleased to now release two additional 150V MXT MV MOSFET product offerings in new packages,” said YJ Kim, CEO of Magnachip. “Magnachip will continue to expand its high-efficiency MXT MOSFET product portfolio, including new releases based on 180nm microfabrication technology in the near future.”
