Micron unveils third generation RLDRAM technology
Micron Technology has introduced its third generation reduced latency dram, a high bandwidth memory technology that enables a more efficient transfer of information across a network.
When compared with previous generations, Micron's RLDRAM 3 technology offers an increase in density and speed, while minimising latency and reducing power consumption.
"RLDRAM 3 memory meets the growing need for technology that can support the increases to network traffic as we watch internet content consumption continue to grow," said Robert Feurle, vice president of dram marketing.
Micron is continuing to provide support for RLDRAM 2 technology and is planning long-term production of the product. Additionally, Micron is transitioning its RLDRAM 2 product portfolio to a 50nm process technology, boosting system performance and lowering power consumption.
Features of RLDRAM 3 include a latency of less than 10ns, densities ranging from 576Mbyte to 1Gbyte and data transfer rates of 2.13Gbit/s
