MOSFET delivers industry leading efficiency in 650V rating

The company has introduced the latest member of its MDmesh V range, which it says was already the industry performance leader, with the best on resistance per area for highest efficiency and power density in 650V rating. According to ST, it has improved a key efficiency metric by more than 23%, a feat the company describes as 'a giant leap to energy saving' typically lost as heat emitted by power conversion circuitry used in systems such as electronic lighting controls, power supplies for consumer products and solar power converters. Maurizio Giudice, ST's power transistor marketing director, said: "The new record emphasises and extends ST's leadership in Super Junction mosfets, of which our MDmesh V represents the latest iteration of ST's well proven Multi-Drain Mesh technology. The enhanced performance will enable customer applications to reduce their energy consumption, underpinning ST's commitment to provide responsible products for the environment while providing outstanding performance through the design and development of innovative products." According to ST, its recently introduced STW88N65M5 MDmesh V mosfet features the industry's lowest on state resistance for 650V devices in the standard TO-247 package, at 0.029Ohms. This betters ST's previous industry benchmark of 0.038Ohms, also set by an MDmesh V device, and is designed to empower end application designers to increase energy efficiency by directly replacing mosfets of higher resistance or to use fewer devices in parallel. This, says ST, reduces assembly sizes and BOM costs. The company adds that the 650V voltage rating of the STW88N65M5 and other MDmesh V devices provides a greater safety margin than that offered by 600V devices from competing manufacturers. This increases the mosfets ability to withstand voltage surges commonly present on ac power lines. ST's MDmesh V technology is available in a range of packages including Max247, TO-247, D2PAK, TO-220/FP, PowerFLAT 8x8 HV and I2PAK.