Described as a silicon carbide (SiC) pioneer with deep expertise in SiC power device design and process GeneSiC is highly profitable, with annual growth rates of over 60%.
The combined company creates a comprehensive, industry-leading technology portfolio in next-generation power semiconductors – both GaN and SiC – with an aggregate market opportunity estimated at over $20 billion per year by 2026.
“GeneSiC is an ideal partner for Navitas with their focus and success in developing industry-leading SiC technology,” said Gene Sheridan, Navitas CEO and co-founder. “Navitas has significant investments in global sales, operations and technical support teams, along with system design centres in EV and data centres. These capabilities are a perfect complement to GeneSiC and will further accelerate their growth in both synergistic and new customers and markets. Today, we have taken a major step in our company’s mission to ‘Electrify Our World™’ and drive our planet’s transition from fossil fuels to clean, efficient, electrical energy.”
“GeneSiC’s patent-protected, advanced technology and innovative, experienced team are critical factors in the growth of our company. Our SiC MOSFETs offer the industry’s highest performance, reliability, and ruggedness – parameters critical towards widespread adoption of electric vehicles and associated infrastructure,” said GeneSiC President Dr. Ranbir Singh. “With almost 20 years of leading-edge R&D, proven platforms, over 500 diverse customers, and growing revenue and profitability, we can leverage Navitas’ mass-production expertise and go-to-market strategy to accelerate SiC revenues.”
In power semiconductors, both GaN and SiC are seen as superior materials to legacy silicon, enabling higher speeds, greater energy savings, faster charging, and significantly reduced size, weight, and cost.
