The joint grant, worth over £400k, will also see Professor Judith Driscoll’s research group at the University of Cambridge’s Department of Materials Science and Metallurgy receive £300k to develop processes for depositing ferroelectric materials on top of Paragraf’s transfer-free graphene in order to produce novel memory devices, including a graphene-ferroelectric field effect transistor (G-FeFET).
This research is expected to lead to power savings of an order of magnitude relative to existing memory device technology, which is key to saving power in data centres and consumer devices to support the AI revolution.
“Working with Paragraf on an important project like this is an exciting prospect, particularly in light of their connection to this department,” said Prof. Driscoll. “The chance to develop such an important, next-generation memory device here in Cambridge, with a company so deeply tied to the area, is important to maintaining this region’s – and the UK’s – leadership in the tech industry in the 21st Century.”
Based in Cambridgeshire, Paragraf’s proprietary graphene deposition process was originally developed at the Department of Materials Science when the company’s now-CEO, Simon Thomas was a researcher under Prof. Sir Colin Humphreys, another Paragraf co-founder and the company’s Chief Scientific Officer.
After spinning out from the university, the company established its first manufacturing facility in Somersham, and has since added facilities in Huntingdon and San Diego, California.
“The future of computing and fields such as AI will require storage solutions that conserve energy and reduce heat output. Graphene is uniquely positioned to fulfil those requirements, so the development of these devices, created alongside Prof. Driscoll’s talented team of scientists, is key,” said Simon Thomas, CEO of Paragraf. “We are encouraged that UK has been forward-thinking enough to recognise this massive opportunity and to invest accordingly.”
