Hiroshi Matsubara, president of Ushio Europe, said: “This joint project builds on the proven technical expertise in EUV Source development and manufacturing of USHIO and TNO’s experience and innovative ability in nanoscale contamination control to enable solutions that can meet future challenges.”
TNO and USHIO are jointly building an experimental EUV exposure and analysis facility to study radiation induced effects on EUV optics and reticles. The facility, called EBL2, will support the common goal of understanding contamination effects on surfaces under extreme ultraviolet radiation conditions. This will speed the development of next-generation lithography systems, masks, and pellicles.
The USHIO high-intensity Sn LDP (Laser-assisted Discharge-produced Plasma) EUV light source will provide pulsed EUV in a controlled environment similar to the lithography system conditions. Sample handling and transport will be automated and have cleanliness levels equal to state-of-the-art semiconductor standards for EUV production.
The USHIO Sn LDP EUV light source is claimed to achieve intensity and output approximately 5 to 10 times higher than that of xenon. It is said to enhance the throughput of EUV mask inspection associated with EUV lithography, which is expected to be adopted in 2017.
