Pilot run of 30nm 2Gb DDR3 DRAM, successful
DRAM manufacturer, Rexchip Electronics has announced it has successfully completed a pilot run of Elpida Memory's 30nm 2Gb DDR3 product. According to Rexchip, the pilot run results have met expectations and 100% migration remains on schedule. The company says it will produce 30nm 4Gb DDR3 DRAM at the same time.
The new 2Gb DDR3 utilises 30nm advanced process technology developed by Elpida and is said to have low power consumption and high efficiency features. According to Rexchip, it achieves 45% more chips per wafer compared to its 40nm process products and migration is expected to be completed in the second half of 2011. A monthly capacity of 85,000 wafers is expected to produce 2Gb DDR3 and 4Gb DDR3 for high end electronic products.
The new 2Gb DDR3 meets the high speed DDR3-1600 (1600Mb/s) standard, uses energy efficient 1.35V and is compliant with DDR3-Plus (seamless BL4 access) for upgrading the performance of consumer electrical appliances. Rexchip is focusing on the 30nm process migration in order to provide high quality and high efficiency DRAM products.
