Power amp IC optimised for WiMAX
1 min read
RF Micro Devices has announced a 2.3–2.7GHz power amplifier IC, specifically optimised for WiMAX systems. According to RFMD, the RF5632 can be designed into applications such as customer premises equipment, gateways, access points, LTE wireless infrastructure, and WiFi based wireless high definition interface for wireless video distribution networks.
The device integrates a 3 stage PA and power detector into a 4 × 4mm QFN package and operates from a standard 5V supply. The RF5632 is also fully dc and rf tested including EVM at the rated output power. It has been designed to deliver an EVM of 2.5% and meet or exceed WiMAX and LTE spectral mask requirements with an output power of 28dBm in the 2.3 – 2.4GHz, 2.4 – 2.5GHz, and 2.5 – 2.7GHz frequency ranges.
The bias of the PA may be controlled to accommodate a 22dB gain step to increase the dynamic range of the system. The device is said to offer high gain of 34dB and high linear output power, with 'best in class' efficiency.
The RF5632 features InGaP HBT semiconductor technology and is packaged in a leadless chip carrier with a backside ground.
