According to the company, efficiency improvements of around 1% have been made across the whole load range compared to the previous generation, with a peak efficiency in excess of 95% claimed when the devices are used in a typical server voltage regulator design. Improved performance is said to be based on the reduction of switching losses by 50% compared to previous OptiMOS technology.
"With the significant reduction in switching losses, OptiMOS 5 products allow engineers to operate their designs at higher switching frequencies, reduce energy consumption and save overall system costs," said Richard Kuncic, general manager of Infineon's Power Management and Multimarket business.
The OptiMOS 5 product family is available in SuperSO8 and S3O8 packages, which support industry standard footprints. With an on state resistance of 1.3 m? at 10V, the company says a 'best in class' product can be realised in a 3.3 x 3.3mm package, board space requirements in high power, high density designs.
OptiMOS 5 MOSFETs are also used in the new half bridge device, called Power Block, and DrMOS 5x5 products. The MOSFET technology improves performance relevant parameters, such as FOMg or FOMgd by more than 30% and reduces power losses. These improvements allow designers to increase overall system efficiency and to operate at higher switching frequencies, optimising system costs and reducing energy consumption
Power Block is a leadless SMD package comprising the low side and high side MOSFETs in a synchronous DC/DC converter into a 5 x 6mm package. The small package outline and the interconnection of the two MOSFETs within the package are said to minimise loop inductance.
OptiMOS 5 25V is also used in a power stage which integrates DrMOS 5x5, a driver and two MOSFETs into a package measuring 5 x 5mm.