Putting the squeeze on transistors to boost performance
1 min read
Researchers from the University of Twente's MESA+ Institute for Nanotechnology, led by Tom van Hemert and Ray Hueting, have shown that transistor leakage current can be radically reduced by 'squeezing' the transistor with a piezoelectric material.
Developing the underlying concept developed by Hueting, van Hemert linked theories of mechanical deformation with quantum mechanical formulas describing the electrical behaviour of transistors to determine that 'squeezed' transistors are much better at switching from off to on than conventional transistors.
Even though processing speed in modern devices is boosted by the use of pressure, leakage current also increases. The use of piezoelectric material is said to allow transistors to be put under pressure when necessary, generating energy savings.
According to the classical theoretical limit, a charge of at least 60mV is needed to make a transistor conduct ten times more electricity, but the piezoelectric transistor uses 50mV to achieve this. As a result, either leakage current can be reduced or more current can be carried in the on state. Either way, says the team, this will boost performance whilst cutting energy consumption.
