With a 33% increase in data rate and bandwidth over Gen1 4800 MT/s solutions, the Rambus Gen3 6400 MT/s DDR5 RCD has been developed to enable a much-improved level of main memory performance for data centre servers. Delivering significantly better latency and power, it offers optimised timing parameters for improved RDIMM margins.
“Data centre workloads have an insatiable thirst for greater memory bandwidth and capacity, and our mission is to advance the performance of server memory solutions that meet this need for each new server platform generation,” said Sean Fan, chief operating officer at Rambus. “We were first in the industry to 5600 MT/s, and now we have raised the bar with our Gen3 DDR5 RCD capable of 6400 MT/s to support a new generation of RDIMMs for server main memory.”
“DDR5 offers tremendous performance enhancements for computing systems,” said Soo-Kyoum Kim, vice president, memory semiconductors at IDC. “As data centre applications accelerate demand for more memory bandwidth, it is critical that the DDR5 ecosystem extends performance for the fundamental needs of next-generation data centres.”
The DDR5 memory interface chips including the RCD, Signal Presence Detect (SPD) Hub and Temperature Sensors are important in achieving a new level of performance for leading-edge servers. More intelligence is built into the RDIMMs enabling over double the data rate and four times the capacity of DDR4 RDIMMs, while at the same time increasing memory and power efficiency.
