RFMD offers three GaAs technologies at Newton Aycliffe fab
RF Micro Devices has added gallium arsenide (GaAs) technology to its foundry services portfolio and will shortly begin providing a full suite of GaAs pseudomorphic high electron mobility transistor (pHEMT) technologies to its customers.
Specifically, the company will make three distinct GaAs pHEMT technologies available, optimised for high power, low noise and rf switching products. All the process technologies are available at RFMD's Newton Aycliffe fab.
The 0.3µm pHEMT technology delivers high power and is optimized for X-band phased array power amplifiers and 8 to 16 GHz wideband military electronic warfare jammers. The 0.25µm technology, which delivers low noise, medium power and high linearity, is targeted at applications including low noise front ends and transmitter mmics. Meanwhile, the 0.6µm technology provides low noise and high linearity switching of rf signals and is designed for applications including wireless front ends and transmit/receive modules.
Bob Van Buskirk, president of RFMD's multi market products group, said, "With our world class GaAs technology, technology expertise, high volume manufacturing, industry leading cycle times and unprecedented levels of support, our foundry service enables a wide range of foundry customers to use advanced compound semiconductor technologies in an efficient and cost effective business model."
