Young-Hyun Jun, president of Memory Business, Samsung Electronics, said: “In the near future, we will also launch next-generation, 10nm class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users.”
The new DRAM supports a data transfer rate of 3200Mbps, which is more than 30% faster than the 2400Mbps rate of 20nm DDR4 DRAM. Also, modules produced from the 10nm class DRAM chips are said to consume 10 to 20% less power, compared to their 20nm-process-based equivalents, which Samsung says will improve the design efficiency of next-generation, high-performance computing systems and other large enterprise networks, as well as being used for the PC and mainstream server markets.
Based on its advancements with the 10nm class DDR4 DRAM, Samsung expects to introduce a 10nm class mobile DRAM solution with high density and speed later this year.
