Samsung develops new graphene based transistor structure
Samsung's Advanced Institute of Technology has developed a new graphene based transistor structure that can switch off current without sacrificing mobility in the 'on' state.
The graphene-silicon Schottky barrier, dubbed Barristor, is designed to switch current on or off by controlling the height of the barrier. Samsung currently holds nine major patents related to the structure and operating method of the device and claims the breakthrough could dramatically improve the efficiency of future transistors.
The company is now exploring potential logic device applications based on the same technology.
