STMicroelectronics first to use tsv for high volume MEMS production

TSV replaces traditional wiring with short interconnects with short vertical interconnects in ST's multi chip devices, such as smart sensors and multi axis inertial modules. According to ST, this enables a higher level of functional integration and performance in a smaller form factor. TSV utilises short, vertical structures to connect multiple silicon dice stacked vertically in a single package. ST claims this offers greater space efficiency and higher interconnect density compared with wire bonding or flip chip stacking. The tsv technology is designed to help shrink the MEMS chip size while increasing its robustness and performance. "There is a great demand for smaller packages in the consumer market," said Benedetto Vigna, corporate vice president and general manager of ST's Analog, MEMS and Sensor Group. "ST's breakthrough implementation of tsv in MEMS devices opens a path to reduced footprints and increased functionality in mobile phones and other gadgets. High performance 3d chip integration in our smart sensors and multi axis inertial modules marks another important milestone in our mission to make MEMS ubiquitous in all facets of life."