Swedes use nanotechnology to build InAs transistor
Swedish researchers claim to have developed a new type of transistor that is 50 times more energy efficient than today’s devices. It is also said to be the first to be developed using nanotechnology.
According to Lars-Erik Wernersson, professor of solid state physics at Lund University’s Faculty of Engineering, researchers have been looking at how to shrink transistors without them overheating. “Our model is made up of indium arsenide, where the electrons move more easily compared with silicon.
“It’s hard to produce transistors with indium arsenide,” he continued, “but if we apply nanotechnology, it’s rather simple.”
According to Prof Wernersson, the material is self organised according to a bottom up principle, instead of being ‘carved out’.
Ultimately, Prof Wernersson and his colleagues hope to reach an operating frequency of 60GHz. “With 60GHz, you can only communicate across short differences. But this frequency range can rationalise wireless communication in the home, for example.”
