Transistors available in tiny 1.1mm² leadless package
1 min read
A new family of ultra small transistors has been launched by NXP, which it claims is the first to be offered in a 1.1 x 1 x 0.37mm, low profile DFN package.
The range includes mosfets with RDS(on) values down to 34mOhm, as well as low saturation and general purpose transistors that are able to boost current capabilities up to 3.2A.
The devices are targeted for use in devices such as power management and load switches in portable and space constrained applications.
"Achieving this high value for drain and collector current in such a small plastic package is unprecedented," said Joachim Stange, product manager, transistors, NXP Semiconductors. "With this milestone, NXP continues to push the envelope in ultra compact packaging and performance in mosfets and bipolar transistors."
The devices are available in two package versions: the dual die package DFN1010B-6 (SOT1216) with the 1.1mm² footprint is claimed to be the smallest package available for dual transistors.
NXP says the products in DFN1010 can replace many WL-CSP devices, as well as larger DFN and standard leaded SMD packages such as SOT23 which is eight times the size, while delivering equivalent or even better performance.
