Tri-Gate transistor awarded Semiconductor Innovation of the Year
Intel's Tri-Gate transistor has been awarded the 'Semiconductor Innovation of the Year' at The Wall Street Journal's Technology Innovation Awards.
Award criteria included breaking with conventional processes in the field and having wide impact on its field or on future technology.
Intel says its Tri-Gate transistors will go into production by the end of this year in its Ivy Bridge chip. According to the company, for the first time since the invention of silicon transistors more than 50 years ago, transistors using a 3d structure will be put into high volume manufacturing.