These devices are capable of high performance, low power, and are available in a small-form-factor addressing the requirements of connected IoT edge devices used in industrial and consumer segments.
As IoT devices become widely deployed in industrial factory automation and smart home control applications and combine processing, connectivity, and sensor technologies in systems that need to be small and upgradeable, demand is growing for flash memories that come in small-form-factor packaging, consume a negligible amount of energy, and support fast software updates.
The W25Q80RV is manufactured in Winbond’s own 12-inch wafer foundry utilising the latest generation of Winbond’s 58nm technology. The die area has been reduced by 40% compared to its predecessor which was built with 90nm technology. In addition to small-form-factor packaging, this new flash is suitable for space-constrained applications where the flash KGD or WLCSP is combined with the SoC in a System-In-Package.
With read speed improved from 104MHz to 133MHz, page programming time slashed by 50%, and active read current reduced by up to 20%, system functions have been significantly optimised, according to Winbond.
XIP (eXecute-In-Place) of code is accomplished at a higher frequency, enabling greater system response while consuming less energy. Faster programming accelerates factory throughput and also lowers manufacturing costs. The short time it takes to conduct an OTA firmware update means greater system availability and less downtime which can result in superior end-user experience.
Along with a reduced form factor this new 8Mb flash supports new use cases for a range of IoT devices with higher performance, lower power, and faster manufacturing programming and OTA update.
After the introduction of this new and improved 8Mb flash, the rest of the low-density RV series will be launched in the coming quarters, enabling migration from W25QxxCV and W25QxxDV series to their W25QxxRV counterparts.
The W25Q80RV supports all common single/dual/quad/QPI commands and read modes for XIP and code shadowing to RAM. This device operates on a single 2.7V to 3.6V power supply with a power-down current down to 1μA. Active read current is optimized from 12mA down to 10mA at 104MHz.
This 8Mb (1MB) flash is sectioned into 64KB or 32KB blocks and is further subdivided into small 4KB sectors which allow for greater flexibility and storage efficiency in applications that require code, data, and parameter storage in the same device. It is also capable of 66MHz Double Data Rate operation enabling the system to achieve the same high speed (133MHz Single Data Rate) read throughput at a lower clock frequency. The Read Command Bypass Mode supports faster memory access for true XIP operation by eliminating the command input cycle.
The W25Q80RV is available now and will be followed by other densities in the family.
