Because most modern circuits rely on controlling electronic charge, which can be disrupted, spintronics, may offer a more robust alternative. However, making a radiation resistant spintronic device requires a material that can maintain its spin-dependence after it has been irradiated. The Michigan research team believes bulk silicon doped n-GaAs could be the answer.
Studying spintronic materials required the research team to combine two well established fields: spin dynamics; and radiation damage. Both tool sets are robust, but combining the two required sifting through the wealth of radiation damage research.
Technically, the Michigan team has measured the spin properties of n-GaAs as a function of radiation fluence using time resolved Kerr rotation and photoluminescence spectroscopy. Results show the spin lifetime and g-factor of bulk n-GaAs is largely unaffected by proton irradiation, making it a candidate for further study for radiation resistant spintronic devices. The team will also study other spintronic materials and prototype devices after irradiation, since it believes there are plenty of questions to tackle.
