The MOSFET was developed using patented Shield Gate Technology which is optimised for higher switching frequencies used in telecom and server power supply to achieve higher efficiency compared to the previous generation.
The 80V Power MOSFET technology has lower switching losses in hard switching, topologies and have less voltage overshoot than the previous generation of devices. This improved performance from light load operation and throughout the load range results in easier design choices for high-efficiency applications.
The 80V MOSFET family of devices offers high levels of power density and energy efficiency, essential in solar, power supplies, and battery power applications such as in eScooters.
The AONR66820 and AONS66811 are Power MOSFETs in DFN3.3x3.3 and DFN 5x6 package, respectively. The AONR66820 is suited for isolated DC-DC converters used in telecom applications, while the AONS66811 is appropriate for synchronous rectification and provides improved reverse recovery charge and reduced voltage overshoot, which provides higher efficiency and more robustness to the power supply.
The AOTL66810 (80V) in TOLL package has approximately 25% smaller footprint than a standard wire-bonded TO-263 (D2PAK) package and the device offers a higher power density compared to existing solutions. It is intended for industrial BLDC motor applications and battery management to reduce the number of MOSFETs in parallel.
The AOTL66810 has a 1.25mOhms max at 10Vgs with a maximum drain current of 420A at 25°C. The pulsed current at 1700A, is limited by the maximum junction temperature of 175°C.
