These transistors provide a 5 % improvement in power efficiency compared to LDMOS-based devices, and enabling high-power multiband applications, are able to offer a size reduction of between 30-50%, when compared to similar LDMOS transistors.
The portfolio now includes transistors with 15 to 600 watts of peak power for all major cellular bands between 1.8 and 3.8 GHz.
The CLF2H27LS-140 is a single-ended transistor providing 140 Watts of peak power in band 41. Other devices currently sampling include the CLF2H1822LS-160 and CLF2H1822LS-220 suitable for 1.8 to 2.2 GHz multiband applications, and the CLF2H38LS-140 and CLF2H38LS-40 (driver) for 3.4 to 3.8 GHz applications with 140 and 40 Watt outputs at P3dB.
The family is intended for RF PA designers looking to develop high efficiency or multiband Doherty power amplifiers for use in wireless infrastructure networks.
