The EPC2152 is a single-chip driver plus eGaN FET half-bridge power stage using EPC’s proprietary GaN IC technology. Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs configured as a half-bridge are integrated within a monolithic chip - as a result the device measures only 3.9 mm x 2.6 mm x 0.63 mm.
When operated in a 48 V to 12 V buck converter at 1 MHz switching frequency, the EPC2152 ePower Stage achieves a peak efficiency above 96% with a solution that is 33% smaller in size on the printed circuit board (PCB) compared to an equivalent multi-chip discrete implementation.
The device is the first offering in what will be a wide-range family of integrated power stages available in chip scale package (CSP) as well as multi-chip quad flat modules (QFM). Over the coming twelve months the family will fill out with products capable of operating at high frequency up to 3 to 5 MHz range as well as high current from 15 A to 30 A per power stage.
This family of products makes it easy for designers to take advantage of the significant performance improvements made possible with GaN technology. Integrated devices in a single chip are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency.
