29 Apr 2015

eGaN power transistors cost less than silicon

According to Efficient Power Conversion, price has been the last barrier to the widespread adoption of GaN transistors as a replacement for silicon MOSFETs. But it claims this barrier has fallen with the introduction of the 60V EPC2035 and 100V EPC2036, which are not only said to be cheaper than silicon equivalents, but also to provide better performance.

Using these parts, the company claims, will allow those designing power systems to take advantage of better switching speeds and to create smaller products.Supplied in passivated die packages measuring 0.9 x 0.9mm, the devices are said to be suited to such applications as high speed DC/DC conversion, wireless power transfer, high frequency hard and soft switching circuits, and lidar/pulsed power systems.

The company has also launched development boards to support product evaluation.The boards, which measure 2 x 1.5in, are in a half-bridge topology and contain all the critical components.

eGaN

Efficient Power Conversion

MOSFET

silicon

http://epc-co.com/epc