The modules can be on mobile or fixed terminals and used in terrestrial point to point and point to multipoint. They offer a range of operating frequencies, including 20 to 500MHz, 500 to 2700MHz and 2500 to 6000MHz.
The design of the amplifiers is based on gallium nitride high electron mobility transistor (HEMT) technology and is said to exhibit high efficiency, good thermal conductivity, high breakdown voltages and low energy consumption.
The modules benefit from high efficiency and gain, with 20, 35, 40, 60, or 100W saturated power options. Each amplifier module is integrated into a compact housing, designed to be integrated into a range of transmit antennas, filters and multiplexers.
The high power RF amplifiers are available as standalone components or mounted in a 2U high 19" rack chassis, which offers dual redundant hot-swap power supplies, local and remote control and monitoring.
