The device builds on the established HybridPACK Drive G1 concept of an integrated B6 package, offering scalability within the same footprint and extending it to higher power and ease-of-use. The HybridPACK Drive G2 will be available with different current ratings, voltage levels (750V and 1200V) and next generation chip technologies EDT3 (Si IGBT) and CoolSiC G2 MOSFET.
With a power range of up to 300 kW within the 750 V and 1200 V classes, the HybridPACK Drive G2 provides high ease-of-use and new features, such as an integration option for next-generation phase current sensor and on-chip temperature sensing, which enable system cost improvements.
The power module is able to achieve higher performance and power density through improved assembly and interconnect technology - the adoption of new interconnect technology (chip sintering) and of new materials (new black plastic housing) enables higher temperature rating, resulting in higher performance and longer product life.
The new module follows on from the first generation (G1) of the HybridPACK Drive, which was introduced in 2017, using silicon EDT2 technology. It offers a power range of 100 kW to 180 kW in the 750 V class.
In 2021, Infineon expanded its product family with the first generation of HybridPACK Drive Automotive CoolSiC MOSFETs, which allowed the inverter design to achieve higher power up to 250 kW within the 1200 V class, longer driving range, smaller battery size and optimised system size and cost.
