Integrated, high temperature igbt minimises component count
Toshiba Electronics Europe has announced the GT40WR21, an igbt with an integrated reverse recovery diode that offers a voltage rating of 1800V.
The N channel device is suitable for induction heating and induction cooking designs and consists of a freewheeling diode monolithically integrated into an igbt chip. It offers support for high speed switching with a fall time of 0.15µs and can support temperatures up to 175°C.
The module is rated for a collector current of 40A and can handle peak currents of 80A for 1ms. Typical saturation voltage at 40A is rated at 2.9V. Maximum collector power dissipation at 25°C is 375W. The integrated diode is rated for a forward current of 20A and a peak current (for 100µs) of 80A.
