The module is suitable for a broad selection of radio and communications applications, including military tactical communications and electronic countermeasures, wireless public safety communications, and land mobile radio systems.
It is a fully matched 10W power amplifier module based on gallium nitride-on-silicon (GaN-on-Si) technology. Operating in the broadband 225 MHz to 2600 MHz range, the module offers up to 40 percent power added efficiency (PAE) and 22 dB power gain.
The module supports up to 36V operation (28V typical) in a robust operating temperature range of minus 40 to 850C.With flexible top-side and bottom-side mounting configurability and a 14 mm × 18 mm package, the module supports radio designs with strict size, weight, and power (SWaP) specifications.
The module also boasts an integrated gold-plated copper heatsink and a laminated air cavity package, eliminating the need for PCB space and componentry associated with unmatched PA modules.
