The StrongIRFET devices are housed in a Medium Can DirectFET package that features dual-sided cooling to deliver high power density and thermal performance. The gate pad has been re-located to the corner of the die on these latest devices, which is said to increase the source contact area to achieve lower thermal resistance to the PCB than standard DirectFET packages.
The devices, which range from 40 to 75V, feature the characteristics of the StrongIRFET family, including low on-state resistance, high current carrying capability and rugged silicon. The product family also features an environmentally-friendly lead-free package that is current and future ROHS compliant.
