Both devices come in a compact 3 millimeter by 3 millimeter, 16-pin TQFN package and offer about half the insertion loss of competitive solutions. IP3 performance is said to be 1000x (30 dB) better than competing Gallium arsenide (GaAs) devices, and they exhibit a linear-in-dB attenuation characteristic across the voltage control range. Their low insertion loss reduces RF chain path loss, while their high linearity improves system data rates.
These new devices are intended for base stations (2G, 3G and 4G), microwave infrastructure, public safety, portable wireless communication/data equipment, test/ATE equipment, military systems, JTRS radios, and HF, VHF and UHF radios.
According to IDT by using silicon-based RF semiconductor technology, its attenuators are able to offer a robust alternative to older GaAs-based semiconductor technology. Silicon technology offers the advantages of improved RF performance as well as more robust electrostatic discharge (ESD) protection, better moisture sensitivity levels (MSL), improved thermal performance and lower current consumption.
The F2258 has an Input IP3 of up to 65dBm, a maximum attenuation slope of 33dB/Volt; a minimum return loss up to 6000MHz, 12.5dB and aqn operating maximum temperature range of 105C. The F2255 device supports a frequency range down to 1MHz and has a maximum attenuation slope of 33dB/Volt. Both devices have bi-directional RF ports, support a single positive supply voltage of either 3V or 5V and have an operating temperature range of -40 to 105C.
