Delivering a combination of industry-leading power density and outright performance, the copper-clip design provides high current conduction, reduced parasitic inductance, and improved thermal performance.
These features make the devices suitable for motor control, power supplies, renewable energy systems, and other demanding applications. The range also includes application-specific MOSFETs (ASFETs) designed for AI server hot-swap functions.
With top-side and bottom-side cooling options, these MOSFETs in CCPAK provide high power density and reliable solutions. All devices are supported by JEDEC registration and Nexperia’s interactive datasheets for seamless integration.
The benchmark PSMN1R0-100ASF is a 0.99 mΩ 100 V power MOSFET capable of conducting 460 A and dissipating 1.55 KW of power, despite being a CCPAK1212 package footprint that occupies only 12mm x 12mm of board space. The PSMN1R0-100CSF offers similar statistics in a top-side cooled version.
The “CC” in CCPAK1212 stands for copper clip, meaning that the power MOSFET silicon die is sandwiched between two pieces of copper, the drain tab on one side and the source clip on the other. With wire bonds entirely eliminated, this form of assembly offers a low on-resistance, reduced parasitic inductances, high maximum current ratings and excellent thermal performance.
CCPAK1212 NextPower 80/100 V MOSFETs are recommended for industrial applications where high efficiency and high reliability are critical, including brushless DC (BLDC) motor control, switched-mode power supplies (SMPS), battery management systems (BMS) and renewable energy storage. The availability of such power-capable MOSFETs in a single package reduces the need for parallelism, simplifying designs and offering more compact, cost-effective solutions.
The announcement also includes some new application specific MOSFETs (ASFETs) targeting the hot-swap function in increasingly powerful AI servers. These devices feature an enhanced safe operating area (SOA), providing superior thermal stability during linear mode transitions.
Across all these applications, the availability of top-side and bottom-side cooling options provides engineers a choice of thermal extraction techniques, especially helpful where dissipating heat through the PCB is impractical due to the sensitivity of other components.
"Despite offering market-leading performance, we know that some customers will be reticent to design-in a relatively new package,” said Chris Boyce, Product Group General Manager at Nexperia. "For this reason, we have registered the CCPAK1212 with the JEDEC standards organisation (reference MO-359). We followed a similar approach when we introduced the first LFPAK MOSFET package some years ago and as a result there are now many compatible devices available in the market.”
All the new CCPAK1212 MOSFET devices are supported with a range of advanced design-in tools, including thermally compensated simulation models. Traditional PDF datasheets are supplemented with Nexperia's interactive datasheets, which now incorporate a new “graph-to-csv” feature that allows engineers to download, analyse and interpret the data behind each device's key characteristics.
Nexperia said that it plans to extend CCPAK1212 packaging to power MOSFETs across all voltage ranges and also to its automotive qualified AEC-Q101 portfolios, addressing the evolving demands of next-generation systems with the highest current and thermal performance requirements.
