The first device in the DTMOS VI series is the TK040N65Z, a 650V device that supports continuous drain currents (ID) up to 57A and 228A when pulsed (IDP). It offers an ultra-low drain-source on-resistance RDS(ON) of 0.04Ω (0.033Ω typ.) which reduces losses in power applications. The enhancement mode device is intended for use in modern high-speed power supplies, due to the reduced capacitance in the design.
Power supply efficiency has been improved as a result of reductions in the key performance index / figure-of-merit (FoM) – RDS(ON) x Qgd and it shows a 40% improvement in this important metric over the previous DTMOS IV-H device, which represents a significant gain in power supply efficiency in the region of 0.36% - as measured in a 2.5kW PFC circuit.
The device is housed in an industry-standard TO-247 package, ensuring compatibility with legacy designs as well as suitability for new projects.
The new device is already in production and shipments have begun.
