The RF power discrete solutions for 32T32R active antenna systems, use the company’s latest proprietary gallium nitride (GaN) technology and complements NXP’s existing portfolio of discrete GaN power amplifier solutions for 64T64R radios, covering all cellular frequency bands from 2.3 to 4.0 GHz.
As 5G networks continue to expand, mobile network operators are adding 32T32R radios to increase their massive MIMO coverage beyond ultra-dense urban areas into less dense urban and suburban areas. By combining 32 antennas instead of 64, coverage can be maintained more cost effectively, while maintaining the high-end 5G experience enabled by massive MIMO.
NXP’s 32T32R solutions are said to deliver twice the power in the same package as its 64T64R solutions, resulting in a smaller and lighter overall 5G connectivity solution. This pin-compatibility enables network operators to scale rapidly across frequency and power levels.
The new series of GaN discrete solutions are designed for 10W average power at the antenna, targeting 320W radio units, with up to 58% of drain efficiency. It includes driver and final-stage transistors and leverages NXP’s highly linearizable RF GaN technology manufactured in NXP’s new GaN fab in Arizona.
