According to Microsemi, its MSCSICSP3/REF2 reference design provides an example of a highly isolated SiC MOSFET dual-gate driver for the SiC SP3 phase leg modules. It can be configured by switches to drive in a half bridge configuration with only side on at any time and with dead time protection. It can also be configured to provide concurrent drive, if necessary. This design is intended for use with Microsemi SiC SP3 modules.
While the DRF1300/Class-D push-pull RF generator is a reference design that allows the designer the ability to evaluate an 80 percent efficient 2000 W push-pull pair Class-D RF generator.
Microsemi will also partake in the conference sessions at PCIM. Among the topics to be discussed will be the commercialisation of 700 V - 1.7 kV SiC devices for automotive and industrial applications.
