Photorelays reduce mounting area by 50%

The TLP3475 and TLP3440 have been designed to deal with high frequency signals, while the TLP3417 and TLP3420 are designed to deal with the high voltages required for signals of measured devices such as semiconductor testers. The devices are targeted at applications where the mounting areas on boards need to be drastically reduced and high speed/high voltage signals need to be measured – for instance in applications such as semiconductor testers, measurement equipment, medical devices and probe cards. They consist of a photo MOSFET optically coupled with an infrared light emitting diode squeezed into an ultra-small VSON4 package. The TLP3475 has ON-state resistance of 1O (typ.) and output capacitance of 12pF to improve pass characteristics at the time of relay contact on and avoid problems during high frequency signal transmission. The chip on chip device also features OFF-state terminal voltage of 50V (max.) and ON-state current of 0.3A (max.) The TLP3440 features improved leakage characteristics for high frequency signals in the off state with OFF-state output terminal voltage of 40V (max.), ON-state current of 0.12A (max.), ON-state resistance of 12O (typ.) and output capacitance of 0.45pF.