These sensors enable high-performance power conversion with GaN and SiC technologies in electrified vehicles, clean energy solutions and data centre applications.
Current high-power-density GaN and SiC FET charging and power infrastructures demand high-speed, low-loss devices to ensure efficiency and reliability. However, existing current-sensing solutions have limited operating ranges, as well as added size and weight that tend to result in designs with additional components and larger BOMs.
To address these challenges, Allegro has introduced these high-bandwidth current sensors to provide efficiency and high-performance with reduced design time and board space. They employ a dual signal paths approach, with one path capturing low-frequency and DC current using Hall-effect elements and the other path capturing high-frequency current data through an inductive coil.
The compact design, efficiency improvements and cost reductions of these current sensors make them suitable for high frequency switching in power electronic systems, while offering the following benefits to designers:
- Efficient and rapid management of high-switching frequencies and thermal conditions for high voltages and currents: Delivers fast response times that provide critical protection and higher efficiency through minimized energy loss and thermal dissipation.
- Ability to achieve stable and safe control while reducing electromagnetic interference: Has a 2% sensitivity error over temperature, while the inductive coil properties increase the signal-to-noise ratio (SNR) as frequency increases, reducing noise and simplifying electromagnetic compatibility.
- Reduced design footprint, enabling system reliability and protection: Offered in a compact and efficient fused-lead SOIC-6 package that can withstand harsh automotive and industrial environments, enabling reliability and protection.
- Balances cost considerations while minimising design complexity: Simplifies designs and facilitates easy-to-design, cost-optimised, high-power, high-frequency switching power conversion for GaN and SiC devices.
