The device features the industry’s first 1700 V gallium nitride switch, fabricated using the company’s proprietary PowiGaN technology.
The 1700 V rating further advances the state-of-the-art for GaN power devices, previously set by Power Integrations’ 900 V and 1250 V devices, which were both launched in 2023. The 1700 V InnoMux-2 IC can support 1000 VDC nominal input voltage in a flyback configuration and achieves over 90 percent efficiency in applications requiring one, two or three supply voltages.
Each output is regulated within one percent accuracy, eliminating post regulators and further improving system efficiency by approximately ten percent. The new device replaces expensive silicon carbide (SiC) transistors in power supply applications such as automotive chargers, solar inverters, three-phase meters and a wide variety of industrial power systems.
Radu Barsan, vice president of technology at Power Integrations, said, “Our new InnoMux-2 ICs combine 1700 V GaN and three other recent innovations: independent, accurate, multi-output regulation; FluxLink, our secondary-side regulation (SSR) digital isolation communications technology; and zero voltage switching (ZVS) without an active-clamp, which all but eliminates switching losses.”
The 1700 V rating is substantially higher than any other commercially available GaN HEMT that is on the power GaN device market, which is set to be worth in excess of $2 billion by 2030.
