Power management mosfet features ‘ultra low’ on resistance
Toshiba Electronics Europe has expanded its range of low voltage mosfets with the introduction of a new n channel power management device.
The SSM3K333R has low loss characteristics, is optimised for standard voltage switching requirements and is targeted at a variety of portable, battery powered applications. It has a maximum on resistance of 42mΩ and is specified for a maximum drain source voltage of 30V.
The mosfet is available in an SOT-23F package measuring 2.9 x 2.4mm. It has a maximum dc current rating of 6A and a drain power dissipation capability of 1W.
