PowerMOSFET technology for fast switching of high currents
NEC Electronics Europe has expanded its low voltage PowerMOSFETs range. Based on its SuperJunction1 technology, NEC’s new products feature an outstanding figure of merit (fom) and minimise switching losses and increase system efficiency.
Compared with the UMOS-4 trench technology, the SuperJunction1 technology reduces the gate charge and the input capacity by over 30% while maintaining low on resistance R. The process involves adding P-doped regions below the active P-well of the trench cell, which reduces the resistance of the N-epitaxial layer through higher doping. This means that for the same on resistance the design rule can be increased and the gate charge reduced.
Currently, four components in a D2PAK package with drain source voltages of 40 and 55v are being produced. The devices NP110N04PUJ and NP110N055PUJ are qualified to AEC-Q101, support a channel temperature up to 175°C and are RoHS-compliant due to tin plated leads.
PowerMOSFETs with SuperJunction1 technology are suitable for applications where large currents have to be switched with high efficiency.
