The IRHNJ9A7130 and IRHNJ9A3130 are claimed to be fully characterised for total ionising dose immunity to radiation of 100kRads and 300kRads respectively. According to the company, the RDS(on) of 25mΩ is 33% lower than the previous device generation.
In combination with increased drain current capability of 35A instead of 22A, this is said to allow the MOSFETs to provide increased power density and reduced power losses in switching applications.
The 100V, 35A MOSFETs have improved single event effect immunity and have a linear energy transfer of up to 90MeV/(mg/cm²).
Both devices are packaged in a hermetically sealed, lightweight, surface mount ceramic SMD-0.5 package measuring 10.28 x 7.64 x 3.12mm. They are also available in bare die form.
The MOSFETs are suited to mission-critical applications requiring an operating life up to and beyond 15 years. Target applications include space-grade DC/DC converters, intermediate bus converters, motor controllers and other high speed switching designs.
