Engineering publications brought to you by Mark Allen

Gan

Beryllium doped GaN could be ‘next generation of power electronics’

Transfer technique produces low cost GaN sensors for range of applications

Timing is everything

Layer transfer technique for thinner GaN layers

Analog Devices makes GaAs and GaN technology acquisition

Deep-ultraviolet LED to replace mercury-based solutions

Silicon carbide technology reaches tipping point

Trace metal recombination centres kill LED efficiency

GaN’s wear resistance offers new application possibilities

650V integrated half bridge for smaller power adaptors

Up to £4m available in compound semiconductor competition

Power amplifiers for 5G made of gallium nitride